TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

N-Channel 650 V (D-S) MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.08608 Mbytes Page：9 Pages

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar