N-Channel 650 V (D-S) MOSFET

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TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N?묬hannel Power MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.08605 Mbytes Page：9 Pages

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

N−Channel Power MOSFET

N?묬hannel Power MOSFET

文件：136.06 Kbytes Page：12 Pages

N?묬hannel Power MOSFET

文件：136.06 Kbytes Page：12 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08609 Mbytes Page：9 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08607 Mbytes Page：9 Pages

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.

GOLD BONDED GERMANIUM DIODE

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1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET

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1.3A, 500V N-CHANNEL POWER MOSFET

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