TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount componen

功率 MOSFET，-30V，-50A，25mΩ，单 P 沟道，D2PAK，逻辑电平

TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS

Power MOSFET 50 Amps, 30 Volts, Logic Level P?묬hannel D2PAK

文件：96.15 Kbytes Page：9 Pages

P-Channel Power MOSFET

文件：143.96 Kbytes Page：9 Pages

P-Channel Power MOSFET

文件：143.96 Kbytes Page：9 Pages

P-Channel Power MOSFET

文件：143.96 Kbytes Page：9 Pages

Power MOSFET 50 Amps, 30 Volts, Logic Level P?묬hannel D2PAK

文件：96.15 Kbytes Page：9 Pages

Power MOSFET 50 Amps, 30 Volts, Logic Level P?묬hannel D2PAK

文件：96.15 Kbytes Page：9 Pages

Power MOSFET 50 Amps, 30 Volts, Logic Level P?묬hannel D2PAK

文件：96.15 Kbytes Page：9 Pages

P-Channel Power MOSFET

文件：143.96 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：967.48 Kbytes Page：8 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel 30 V (D-S) MOSFET

文件：1.0229 Mbytes Page：8 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.02287 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：967.38 Kbytes Page：8 Pages