位置：首页 > IC中文资料第146页 > MTB50P03HDLG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTB50P03HDLG | Power MOSFET 50 Amps, 30 Volts, Logic Level P?묬hannel D2PAK 文件：96.15 Kbytes Page：9 Pages | ONSEMI 安森美半导体 |   | |
MTB50P03HDLG | P-Channel Power MOSFET 文件：143.96 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.0229 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.02287 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：967.38 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
MTB50P03HDLG产品属性
- 类型
描述
- 型号
MTB50P03HDLG
- 功能描述
MOSFET PFET 30V 50A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
32365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
24+ |
TO-263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ONS |
24+ |
D2PAK |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON |
25+23+ |
TO263 |
72084 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
22+ |
D2PAK |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
24+ |
D2PAK |
20000 |
只做原厂渠道 可追溯货源 |
|||
ON |
23+ |
TO-263 |
255 |
正规渠道,只有原装! |
|||
ON |
24+ |
D2PAK3LEAD |
8866 |
||||
ON/安森美 |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
MTB50P03HDLG芯片相关品牌
MTB50P03HDLG规格书下载地址
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