TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N?묬hannel Power MOSFET

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TMOS POWER FET 20 AMPERES 200 VOLTS

N−Channel Power MOSFET

N?묬hannel Power MOSFET

文件：252.78 Kbytes Page：12 Pages

N-Channel 200 V (D-S) MOSFET

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N-Channel 200 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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Panels and Panel Accessories

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Panels and Panel Accessories

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PERFORATED PANELS

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