TMOS POWER FET 1.0 AMPERES 1000 VOLTS

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on)= 9.0 OHM The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilit

TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold