MT5C2568ECW-20/883C集成电路资料批发供应采购-IC资料网

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型号	功能描述	生产厂家企业	LOGO
MT5C2568ECW-100/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-100SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semicon	AUSTIN	AUSTIN
AS5C2568DJ	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semicon	AUSTIN	AUSTIN
AS5C2568	Low power standby 文件：217.48 Kbytes Page：17 Pages	MICROSS	MICROSS

MT5C2568ECW供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	MT5C2568F-45L	ASI	24+	NA/	30	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市创新迹电子有限公司	MT5C2568ECW-55L	ASI	22+	LCC	20000	公司只有原装品质保障	询价
深圳市赛美科科技有限公司	MT5C6401DJ-12	MICRON		64K1bit5V	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛特兴科技有限公司	MT5C2568F-45L	ASI	QQ咨询	NA	92	全新原装研究所指定供货商	询价
标准国际(香港)有限公司	MT5C256DJ15		25+		28	公司优势库存热卖中!!	询价
深圳市明嘉莱科技有限公司	MT5C6401DJ-12	MICRON/美光	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市振宏微科技有限公司	MT5C6401DJ12TR	MICRON	23+	NA	2986	专做原装正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	MT5C2568F-45L	ASI	23+	NA	14985	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市昊创电子有限公司	MT5C2568F-12	MICROSS	15+	28CFP.740	50	受控型号优势订货-军工器件供应商	询价
深圳市欧立现代科技有限公司	MT5C256EC45	mt	24+	N/A	6980	原装现货,可开13%税票	询价

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MT5C2568ECW供应商更多...

MT5C2568ECW芯片相关品牌

MT5C2568ECW规格书下载地址

MT5C2568ECW参数引脚图相关

MT5C2568ECW数据表相关新闻

MT61K512M32KPA-21:U

MT61K512M32KPA-24:U

MT53E512M32D1ZW-046 IT:B TR 动态随机存取存储器

MT6625LN/A AOS/万代

MT53E768M32D4DT-053 AIT:E 假一罚十

MT53E512M32D2NP-053 WT:E 销售一系列芯片，全新原装，绝无虚假。

DdatasheetPDF页码索引