位置:首页 > IC中文资料第6791页 > AS5C2568
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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AS5C2568 | 32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | ||
AS5C2568 | 32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | ||
AS5C2568 | 32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | ||
AS5C2568 | Lowpowerstandby 文件:217.48 Kbytes Page:17 Pages | MICROSS MICROSS | ||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. Forflexibilityinhigh-speedmemoryapplications,AustinSemicon | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN | |||
32Kx8SRAMSRAMMEMORYARRAY GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell.TheseSRAMsarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •AccessTimes:12,15,20,25,35,45,55,70,&100ns | AUSTIN AUSTIN |
AS5C2568产品属性
- 类型
描述
- 型号
AS5C2568
- 制造商
AUSTIN
- 制造商全称
Austin Semiconductor
- 功能描述
32K x 8 SRAM SRAM MEMORY ARRAY
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROSS |
2021+ |
28CLCC.550 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ASI |
23+ |
CDIP |
66800 |
原装正品专营军工 |
|||
ASI |
2308+ |
CDIP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
|||
ASI |
QQ咨询 |
CDIP |
132 |
全新原装 研究所指定供货商 |
|||
ASI |
18 |
CDIP |
200 |
进口原装正品优势供应QQ3171516190 |
|||
MICROSS |
15+ |
28CLCC.550 |
50 |
受控型号优势订货-军工器件供应商 |
|||
22+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
||||
ASI |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ASI |
22+ |
AUCDIP |
12245 |
现货,原厂原装假一罚十! |
|||
ASI |
22+ |
SOJ |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
AS5C2568规格书下载地址
AS5C2568参数引脚图相关
- bf419
- BDM
- bcm2727
- bcm
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- AS657
- AS637
- AS620BR
- AS620BN
- AS620AR
- AS620AN
- AS6200C
- AS6200
- AS620
- AS6133
- AS6066
- AS6064
- AS6063
- AS6054
- AS-60-5
- AS6045
- AS6043
- AS6004
- AS-60
- AS-5W-K
- AS5C2568DJ-20/XT
- AS5C2568DJ-20/IT
- AS5C2568DJ-20/883C
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- AS5C2568DJ-12/XT
- AS5C2568DJ-12/IT
- AS5C2568DJ-12/883C
- AS5C2568DJ
- AS5C2568C-20L/IT
- AS5C2568C-20L/883C
- AS5C2568C-17L/XT
- AS5C2568C-17L/883C
- AS5C2568C-15L/XT
- AS5C2568C-15L/IT
- AS5C2568C-15L/883C
- AS5C2568C-12L/XT
- AS5C2568C-12L/IT
- AS5C2568C-12L/883C
- AS5C1008TP-20IT
- AS5C1008TP-15XT
- AS5C1008TP-15IT
- AS5C1008DJ-25/XT
- AS5C1008DJ-25/IT
- AS5C1008DJ-20/XT
- AS5C1008DJ-20/IT
- AS5C1008DJ-15/XT
- AS5C1008DJ-15/IT
- AS5C1008-25
- AS5C1008-20
- AS5C1008-15
- AS5C1008_05
- AS5C1008
- AS58LC1001F-35/883C
- AS58LC1001F-300/XT
- AS58LC1001F-300/IT
- AS58LC1001F-300/883C
- AS58LC1001F-250/XT
- AS58LC1001F-250/IT
- AS5715R
- AS-568
- AS568
- AS5601
- AS5600
- AS5502
- AS5501
- AS5410
- AS5403A
- AS535D
- AS535
- AS5311
- AS5306B
- AS5306A
- AS5306
- AS5305
- AS5304B
- AS5304A
- AS5304
- AS529
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AS6200C,全新原装当天发货或门市自取0755-82732291.
2020-4-23AS6200C-AWLM-S
AS6200C-AWLM-S,全新原装当天发货或门市自取0755-82732291.
2020-4-23AS5601-ASOM等ams品牌原装正品优势库存欢迎询价联系电话18888200211qq3004768409
AS5601-ASOM AS5047D-ATSM AS3435-EQFM AS5040-ASST TCS34725FN TMD26721 TSL2561T AS1107WL-T AS1115-BSST AS1302-BWLT AS5172B-HTSM AS5600-ASOM AS7211-BLGT AS7225-BLGT AS8510-ASSM IAQ-COREC TSL1401CL AS1100WL-T AS1110-BSST
2019-2-26
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