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型号	功能描述	生产厂家企业	LOGO
MT5C2568CW-100/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-100SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
AS5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semicon	AUSTIN	AUSTIN
AS5C2568DJ	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semicon	AUSTIN	AUSTIN
AS5C2568	Low power standby 文件：217.48 Kbytes Page：17 Pages	MICROSS	MICROSS

MT5C2568CW供应商更多...

更新时间：2025-12-26 11:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	MT5C2568CW-25/883C	ASI	22+	AUCDIP	12245	现货,原厂原装假一罚十!	询价
贸泽芯城（深圳）电子科技有限公司	MT5C2568CW-45	ASI	23+	CDIP	14980	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市能元时代电子有限公司	MT5C2568CW-45	ASI	23+	CDIP	12800	公司只有原装欢迎来电咨询。	询价
深圳市昊创电子有限公司	MT5C2568EC-15	MICROSS	15+	28CLCC.550	50	受控型号优势订货-军工器件供应商	询价
深圳市华斯顿科技有限公司	MT5C2568DJ-25L	SUNDRY	25+23+	原厂原包	22981	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市佳鑫美电子科技有限公司	MT5C2568DJ-20		25+	SOJ28	3629	原装优势!房间现货!欢迎来电!	询价
深圳市创新迹电子有限公司	MT5C2568CW-25	ASI	22+	CDIP	20000	公司只做原装品质保障	询价
深圳市瑞祥辉半导体有限公司	MT5C2568CW-25	ASI	2308+	CDIP	4862	只做进口原装!假一赔百!自己库存价优!	询价
深圳市诺美思科技有限公司	MT5C2568DJ-15	MICRON		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市科恒伟业电子有限公司	MT5C2568CW-25/883C	ASI	2518+	AUCDIP	1546	只做原装正品现货或订货假一赔十!	询价

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MT5C2568CW供应商更多...

MT5C2568CW芯片相关品牌

MT5C2568CW规格书下载地址

MT5C2568CW参数引脚图相关

MT5C2568CW数据表相关新闻

MT61K512M32KPA-21:U

MT61K512M32KPA-24:U

MT53E512M32D1ZW-046 IT:B TR 动态随机存取存储器

MT6625LN/A AOS/万代

MT53E768M32D4DT-053 AIT:E 假一罚十

MT53E512M32D2NP-053 WT:E 销售一系列芯片，全新原装，绝无虚假。

DdatasheetPDF页码索引