128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM

GENERAL DESCRIPTION The ASI AS5C1008 is a high speed, low power, 128K by 8-bit ruggedized plastic (COTS) CMOS Static RAM. It is fabricated using high performance, CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns (

Low active power

GENERAL DESCRIPTION The AS5C1008 is a high speed, low power, 128K by 8-bit ruggedized plastic (COTS) CMOS Static RAM. It is fabricated using high performance, CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns (Max)

128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM

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