您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5695页 > MT28F008

型号 功能描述 生产厂家&企业 LOGO 操作
MT28F008B3

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3SG-9B

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3SG-9BET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3SG-9T

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3SG-9TET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3VG-9B

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3VG-9BET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3VG-9T

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3VG-9TET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3WG-9B

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3WG-9BET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3WG-9T

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3WG-9TET

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B5

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B5(x8)andMT28F800B5(x16/x8)arenonvolatile,electricallyblock-erasable(Flash),programmableread-onlymemoriescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writingorerasingthedeviceisdonewitha5VVPPv

MicronMicron Technology

镁光美国镁光科技有限公司

Micron
MT28F008B3VG-9 B TR

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA
MT28F008B3VG-9 BET

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA
28F008SA

8-MBIT(1-MBITx8)FlashFileTMMEMORY

Intel’s28F008SA8-MbitFlashFileTMMemoryisthehighestdensitynonvolatileread/writesolutionforsolid-statestorage.The28F008SA’sextendedcycling,symmetricallyblockedarchitecture,fastaccesstime,writeautomationandlowpowerconsumptionprovideamorereliable,lowerpower,lighter

IntelIntel Corporation

英特尔

Intel
28F008SA

8MBIT(1MBITx8)FLASHMEMORY

PRODUCTOVERVIEW TheVE28F008isahigh-performance8Mbit(8,388,608bit)memoryorganizedas1Mbyte(1,048,576bytes)of8bitseach.Sixteen64Kbyte(65,536byte)blocksareincludedontheVE28F008.AmemorymapisshowninFigure4ofthisspecification.Ablockeraseoperationerasesone

IntelIntel Corporation

英特尔

Intel
28F008SA-L

8-MBIT(1MBITx8)FLASHFILETMMEMORY

PRODUCTOVERVIEW The28F008SA-Lisahigh-performance8-Mbit(8,388,608-bit)memoryorganizedas1Mbyte(1,048,576bytes)of8bitseach.Sixteen64-Kbyte(65,536-byte)blocksareincludedonthe28F008SA-L.AmemorymapisshowninFigure6ofthisspecification.Ablockeraseoperationerases

IntelIntel Corporation

英特尔

Intel
28F008SA-L

8MBIT(1MBITx8)FLASHMEMORY

PRODUCTOVERVIEW TheVE28F008isahigh-performance8Mbit(8,388,608bit)memoryorganizedas1Mbyte(1,048,576bytes)of8bitseach.Sixteen64Kbyte(65,536byte)blocksareincludedontheVE28F008.AmemorymapisshowninFigure4ofthisspecification.Ablockeraseoperationerasesone

IntelIntel Corporation

英特尔

Intel
H28F008SC-V

M-bit(1MBx8)Smart5FlashMemories

FEATURES •Smart5technology –5VVCC –5Vor12VVPP •Highperformancereadaccesstime LH28F008SC-V85/SCH-V85 –85ns(5.0±0.25V)/90ns(5.0±0.5V) LH28F008SC-V12/SCH-V12 –120ns(5.0±0.5V) •Enhancedautomatedsuspendoptions –Bytewritesuspendtoread –Blockerasesuspend

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司（SMA）

SHARP

MT28F008产品属性

  • 类型

    描述

  • 型号

    MT28F008

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

MT28F008供应商更多...

更新时间：2025-6-25 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
MT28F008B5VG-8T
MT
24+
NA/
120
优势代理渠道,原装正品,可全系列订货开增值税票
询价
上海意淼电子科技有限公司
MT28F008B5VG-8TD
MT
23+
TSOP40
20000
全新原装假一赔十
询价
深圳市科恒伟业电子有限公司
MT28F008B5VG-8TD
MT
2016+
TSOP40
6528
只做进口原装现货!或订货,假一赔十!
询价
深圳市富诚威科技有限公司
MT28F008B5VG-8BET
MICRON
24+
TSOP
4650
询价
深圳市佳鑫美电子科技有限公司
MT28F008B5VG-8
MT
24+
TSOP
2568
原装优势!绝对公司现货
询价
深圳市赛美科科技有限公司
MT28F008B5VG-8T
MICRON
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
标准国际(香港)有限公司
MT28F008B5VG-8T
MICRON
0044-
218
公司优势库存 热卖中!
询价
深圳市弘为电子有限公司
MT28F008B5-8BET
-
24+
-
2860
原装现货假一罚十
询价
深圳市壹芯创科技有限公司
MT28F008B5VG-8T
MT
22+
TSOP
5000
全新原装现货!价格优惠!可长期
询价
深圳市一线半导体有限公司
MT28F008B5VG-8TD
24+
5000
公司存货
询价

MT28F008芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • POWERBOX
  • RECTRON
  • SY
  • TAI-TECH
  • WINBOND

MT28F008规格书下载地址

MT28F008参数引脚图相关

MT28F008数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示