位置:首页 > IC中文资料第338页 > MT28F008B3
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MT28F008B3 | FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | ||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
FLASHMEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation 英特尔 | |||
SMART3ADVANCEDBOOTBLOCKBYTE-WIDE INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation 英特尔 |
MT28F008B3产品属性
- 类型
描述
- 型号
MT28F008B3
- 制造商
MT
- 功能描述
NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICRO |
22+ |
SOP |
12245 |
现货,原厂原装假一罚十! |
|||
MT |
22+ |
TSOP |
30000 |
只做原装正品 |
|||
MICREL/麦瑞 |
22+ |
SAMSUNG/三星 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
MICRON |
2020+ |
TSOP |
937 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MICRO |
21+ |
SOP |
36680 |
只做原装,质量保证 |
|||
MT |
1824+ |
TSOP40 |
5620 |
原装现货专业代理,可以代拷程序 |
|||
MICRON |
00+ |
TSOP/40 |
58 |
原装现货海量库存欢迎咨询 |
|||
MT |
24+ |
QFN |
9600 |
原装现货,优势供应,支持实单! |
|||
21+ |
TSSOP |
12588 |
全新原装深圳现货 |
||||
MT |
24+ |
TSOP40 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
MT28F008B3规格书下载地址
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