型号 功能描述 生产厂家&企业 LOGO 操作
MT28F008B3

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation

英特尔

Intel

SMART3ADVANCEDBOOTBLOCKBYTE-WIDE

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation

英特尔

Intel

MT28F008B3产品属性

  • 类型

    描述

  • 型号

    MT28F008B3

  • 制造商

    MT

  • 功能描述

    NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP

更新时间:2025-6-25 11:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRO
22+
SOP
12245
现货,原厂原装假一罚十!
MT
22+
TSOP
30000
只做原装正品
MICREL/麦瑞
22+
SAMSUNG/三星
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
MICRON
2020+
TSOP
937
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRO
21+
SOP
36680
只做原装,质量保证
MT
1824+
TSOP40
5620
原装现货专业代理,可以代拷程序
MICRON
00+
TSOP/40
58
原装现货海量库存欢迎咨询
MT
24+
QFN
9600
原装现货,优势供应,支持实单!
21+
TSSOP
12588
全新原装深圳现货
MT
24+
TSOP40
15000
只做自己库存,全新原装进口正品假一赔百,可开13%增

MT28F008B3芯片相关品牌

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  • SUNMATE
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