您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5695页 > MT28F008B3

型号 功能描述 生产厂家 企业 LOGO 操作
MT28F008B3

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3

FLASH MEMORY

MICRON

美光

MT28F008B3SG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9 B TR

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ETC

知名厂家

MT28F008B3VG-9 BET

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ETC

知名厂家

28F008B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

28F008B3

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

MT28F008B3产品属性

  • 类型

    描述

  • 型号

    MT28F008B3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

MT28F008B3供应商更多...

更新时间：2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MT28F008B3VG-9BET
micron(镁光)
24+
标准封装
52048
全新原装正品/价格优惠/质量保障
询价
深圳市华睿芯科技有限公司
MT28F008B3-10BD
MICRONAS
24+
TSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市赛美科科技有限公司
MT28F008B3-9BF
MICRON
TSOP-40
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
千层芯半导体(深圳)有限公司
MT28F008B3VG-10B
MICRON
24+
TSOP-40
1913
MICRON专营原装进口现货
询价
深圳市豪迈兴电子有限公司
MT28F008B3
N/A
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
瀚佳科技(深圳)有限公司
MT28F008B3-10BD
MICRONAS
24+
TSOP
35200
一级代理/放心采购
询价
深圳市腾亿芯科技有限公司
MT28F008B3VG-9B
MT
25+
TSOP
13800
原装,请咨询
询价
深圳市宏世佳电子科技有限公司
MT28F008B3-10B
MT
2025+
TSSOP
3715
全新原厂原装产品、公司现货销售
询价
深圳市得捷芯城科技有限公司
MT28F008B3VG-9BF
Micron(镁光)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市中飞凌科技有限公司
MT28F008B3VG-9BF
MICRON
26+
TSOP
360000
原装现货
询价

MT28F008B3芯片相关品牌

MT28F008B3规格书下载地址

MT28F008B3参数引脚图相关

MT28F008B3数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示