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位置：首页 > IC中文资料第5695页 > MT28F008B3

型号 功能描述 生产厂家 企业 LOGO 操作
MT28F008B3

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3

FLASH MEMORY

MICRON

美光

MT28F008B3SG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3SG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9BET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3WG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

MICRON

美光

MT28F008B3VG-9 B TR

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ETC

知名厂家

MT28F008B3VG-9 BET

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 8MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器

ETC

知名厂家

28F008B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

28F008B3

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

MT28F008B3产品属性

  • 类型

    描述

  • 型号

    MT28F008B3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

MT28F008B3供应商更多...

更新时间：2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MT28F008B3VG-9BET
micron(镁光)
24+
标准封装
52048
全新原装正品/价格优惠/质量保障
询价
中天科工半导体（深圳）有限公司
MT28F008B3VG-10B
MICROCHIP/微芯
25+
SOP
15620
MICROCHIP/微芯全新特价MT28F008B3VG-10B即刻询购立享优惠#长期有货
询价
瀚佳科技(深圳)有限公司
MT28F008B3-10BD
MICRONAS
24+
TSOP
35200
一级代理/放心采购
询价
深圳市华睿芯科技有限公司
MT28F008B3-10BD
MICRONAS
24+
TSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
MT28F008B3-10BD
MT
0040+
TSOP40
47
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市中飞凌科技有限公司
MT28F008B3VG-9BF
MICRON
26+
TSOP
360000
原装现货
询价
深圳市豪迈兴电子有限公司
MT28F008B3
N/A
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市华来深电子有限公司
MT28F008B3
SAMSUNG
23+
TSOP
8650
受权代理!全新原装现货特价热卖!
询价
千层芯半导体(深圳)有限公司
MT28F008B3VG-10B
MICRON
24+
TSOP-40
1913
MICRON专营原装进口现货
询价
深圳诚思涵科技有限公司
MT28F008B3-10BD
MICROM
18+
TSOP40
85600
保证进口原装可开17%增值税发票
询价

MT28F008B3芯片相关品牌

MT28F008B3规格书下载地址

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MT28F008B3数据表相关新闻

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