型号 功能描述 生产厂家 企业 LOGO 操作
MT28F008B3WG-9TET

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

Micron

美光

MT28F008B3WG-9TET产品属性

  • 类型

    描述

  • 型号

    MT28F008B3WG-9TET

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

更新时间:2025-10-28 16:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
24+
-
2860
原装现货假一罚十
MICRON
25+
TSOP
4650
MT
25+
TSOP
2568
原装优势!绝对公司现货
25+
91
公司优势库存 热卖中!
MICRON
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货
MT
22+
TSOP
5000
全新原装现货!价格优惠!可长期
MCR
24+
198
MT
25+
TSOP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
Micron(镁光)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Micron Technology Inc.
24+
40-TSOP I
56200
一级代理/放心采购

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