Glass Passivated Three Phase Rectifier Bridge

VRRM 800 to 1800V ID 100 Amp Features • Three phase bridge rectifier • Blocking voltage: 800 to 1800V • Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate • Glass passivated chip Applications • Three phase rectifiers for power supplies • Rectifiers for DC motor fiel

Glass Passivated Three Phase Rectifier Bridge

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封装/外壳：M3 包装：管件 描述：BRIDGE RECT 3PHASE 1.2KV 100A M3 分立半导体产品 二极管 - 桥式整流器

Single output 15W ~ 1500W

Features ● marking (Low Voltage Directive) ● 74 models, 15 ~ 1500W ● Wide input voltage range EWS15, 25, 50: 85 ~ 265VAC universal input EWS100, 150, 300, 600: 100/200VAC auto-selectable EWS1500: 100/200VAC user-selectable ● Wide output voltage range: 520 (EWS300, 600, 1500) ●

Single output 50W ~ 600W???

Features • marking (Low Voltage Directive) • Wide input voltage range: Universal input 85 ~ 265VAC • PFHC (EN61000-3-2) • EMI (EN55011-B, EN55022-B, VCCI-B, FCC-B) • EMC (EN61000-4-2, -3, -4, -5, -6) • 5 year warranty

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136-175 MHz band. FEATURES: • 175 MHz 12.5 V • Internal Input Matchin

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB100-12 is Designed for FEATURES: • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB100-12 is Designed for FEATURES: • Omnigold™ Metalization System