NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Case Material: Molded Plastic. UL Flammabi

NPN Silicon Plastic-Encapsulate Transistor

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小信号双极型晶体管

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

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