RF/Microwave Si BJT Power Devices & Pallets

Datasheet: MS652~ MS652S

封装/外壳：M123 包装：托盘 描述：RF TRANS NPN 16V 512MHZ M123 分立半导体产品 晶体管 - 双极（BJT）- 射频

5.0 Watts, 12.5 Volts, Class C UHF Applications

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RF & MICROWAVE TRANSISTORS

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PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52