| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MS220 | Power Film Resistors [CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
MS220 | 2.0A SCHOTTKY BARRIER DIODE 文件：135.75 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | |
MS220 | Schottky Diodes | DACO 罡境电子 | | |
MS220 | Type MS Power Film Resistors 文件：400.51 Kbytes Page：2 Pages | CADDOCK | | |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 500 | ADPOW | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2201 is a silicon NPN, Class C microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1025-1150 MHz • GOLD METALLIZATI | ADPOW | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
以太网收发电路 MS2201是吉比特以太网收发器电路，可以实现超高速度的全双工数据传输。它的通信遵从IEEE 802.3 Gigabit Ethernet协议中的10比特接口的时序要求协议。MS2201支持数据传输速率从1Gbps到1.85Gbps。 • 电源电压：2.5V、3.3V\n• 工作温度：-40°C100°C\n• 传输速率：1 到 1.85 吉比特每秒(Gbps)\n• 低功耗：在 1.25Gbps 时，小于 200mW\n• 兼容 LVPECL 高速差分 I/O 接口\n• 单个 PLL 锁相环\n• 支持 10 比特接口或者 5 比特（双倍数据速率）接口\n• 最小支持接收差模电压为 200mV 的差分信号\n• 支持 3.3V 的 LVTTL 输入\n• 热插拔保护\n• 遵从 IEEE 802.3 Gigabit Ethernet 协议\n• 遵从 IEEE 1149.1 JTAG 协议; | RELMON 瑞盟科技 | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2202 is a low power Class C NPN transistor specifically designed for avionics driver applications. This device is capable of withstanding an ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic bonding techniques ensure high | ADPOW | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CLASS A OPERATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P | ADPOW | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P | MICROSEMI 美高森美 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2204 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features ● 1090 MHz ● 18 VOLTS ● P | ADPOW | | ||
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2205 is a gold metallized, silicon NPN power transistor designed for pulsed applications with low duty cycles, such as IFF, DME, and TACAN. It can withstand infinite VSWR under rated conditions. The MS2205 is housed in the .250 input-matched stripline package, resulting in im | ADPOW | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features · 1025-1150 MHz · GO | MICROSEMI 美高森美 | | ||
DPDT Switch Function, 1000Vrms min Dielectric Strength
| CIT | | ||
DPDT Switch Function, 1000Vrms min Dielectric Strength
| CIT | | ||
DPDT Switch Function, 1000Vrms min Dielectric Strength
| CIT | | ||
DPDT Switch Function, 1000Vrms min Dielectric Strength
| CIT | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1025-1150 MHz • GOLD METALLI | ADPOW | | ||
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. Feat | ADPOW | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION DESCRIPTION: THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES. Features ● HERMETIC METAL/CERAMIC | MICROSEMI 美高森美 | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
CIT SWITCH SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance | CIT | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION DESCRIPTION: The MS2209 is a broadband, high peak pulse power silicon NPN bipolar device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycles and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specializ | MICROSEMI 美高森美 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION: The MS2209 is a broadband, high peak pulse power silicon NPN bipolar device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycles and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specializ | ADPOW | | ||
Trans RF BJT NPN 65V 43.2A 5-Pin Case M-102 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
封装/外壳：M220 包装：散装 描述：RF TRANS NPN 45V 1.15GHZ M220 分立半导体产品 晶体管 - 双极（BJT）- 射频 | MICROSEMI 美高森美 | | ||
包装：卷带（TR）剪切带（CT） 描述：RF SHLD COVER 0.783\ RF/IF，射频/中频和 RFID 射频屏蔽 | ETC 知名厂家 | ETC | | |
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | | ||
Sub-Miniature Precision Circuit Breaker 文件：104.93 Kbytes Page：2 Pages | EATON 伊顿 | |
MS220产品属性
- 类型
描述
- VRRM（V）：
20
- Io@Tc（A）：
2
- Io@Tc（℃）：
100
- IFSM(A)：
50
- IR@Tj25℃ （mA）：
0.5
- VF（V）：
0.55
- IF（A）：
2
- Tj：
-65℃ to +150℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RUIMENG/瑞盟 |
25+ |
SMD |
40000 |
公司现货原装正品 |
|||
microsem |
25+ |
66880 |
原装正品，欢迎询价 |
||||
RUIMENG/瑞盟 |
25+ |
QFP-64 |
3200 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
MICROSEMI |
24+ |
38520 |
一级代理/放心购买 |
||||
MS |
SOP14 |
2500 |
原装长期供货! |
||||
国产 |
25+ |
SOP-14 |
20000 |
原装 |
|||
MSC |
24+ |
SMD |
1 |
||||
MICROSEMI |
20+ |
110 |
全新现货热卖中欢迎查询 |
||||
MSC |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
MS |
25+ |
QFP64 |
6000 |
深圳市拓亿芯电子有限公司 全新原装现货,假一赔十。 |
MS220芯片相关品牌
MS220规格书下载地址
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