Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

Type MS Power Film Resistors

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2.0A SCHOTTKY BARRIER DIODE

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Schottky Diodes

RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 500

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2201 is a silicon NPN, Class C microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1025-1150 MHz • GOLD METALLIZATI

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2202 is a low power Class C NPN transistor specifically designed for avionics driver applications. This device is capable of withstanding an ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic bonding techniques ensure high

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P

RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P

CLASS A OPERATION

DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1090 MHz • 18 VOLTS • P

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2204 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features ● 1090 MHz ● 18 VOLTS ● P

RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2205 is a gold metallized, silicon NPN power transistor designed for pulsed applications with low duty cycles, such as IFF, DME, and TACAN. It can withstand infinite VSWR under rated conditions. The MS2205 is housed in the .250 input-matched stripline package, resulting in im

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features · 1025-1150 MHz · GO

DPDT Switch Function, 1000Vrms min Dielectric Strength

DPDT Switch Function, 1000Vrms min Dielectric Strength

DPDT Switch Function, 1000Vrms min Dielectric Strength

DPDT Switch Function, 1000Vrms min Dielectric Strength

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1025-1150 MHz • GOLD METALLI

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. Feat

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 300mA @ 50VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

DESCRIPTION: THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES. Features ● HERMETIC METAL/CERAMIC

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 500mA @ 15VDC Electrical Life 10,000 cycles typical Contact Resistance

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2209 is a broadband, high peak pulse power silicon NPN bipolar device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycles and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specializ

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

DESCRIPTION: The MS2209 is a broadband, high peak pulse power silicon NPN bipolar device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycles and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specializ

Trans RF BJT NPN 65V 43.2A 5-Pin Case M-102

封装/外壳：M220 包装：散装 描述：RF TRANS NPN 45V 1.15GHZ M220 分立半导体产品 晶体管 - 双极（BJT）- 射频

以太网收发电路

包装：卷带（TR）剪切带（CT） 描述：RF SHLD COVER 0.783\ RF/IF，射频/中频和 RFID 射频屏蔽

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages

Sub-Miniature Precision Circuit Breaker

文件：104.93 Kbytes Page：2 Pages