DESCRIPTION:

The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.

Features

• 500 Watts @ 250 µSec Pulse Width, 10 Duty Cycle

• Refractory Gold Metallization

• Emitter Ballasting And Low Resistance For Reliability and Ruggedness

• Infinite VSWR Capability At Specified Operating Conditions

• Input Matched, Common Base Configuration

• Balanced Configuration