RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 500

封装/外壳：M102 包装：散装 描述：RF TRANS NPN 65V 500MHZ M102 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 65V 43.2A 5-Pin Case M-102

RF/Microwave Si BJT Power Devices & Pallets

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr