Schottky Diodes

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. KEY FEATURES ■ 150 MHz ■ 7.5 Volts ■ Common Emitter ■ POUT = 2.5 W Min. ■ GP = 11.0 dB Gain APPLICATIONS/BE

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. Features • 150 MHz • 7.5 Volts • Common Emitter • POUT = 2.5 W Min. • GP = 11.0 dB Gain

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. KEY FEATURES ◾ 175 MHz ◾ 7.5 Volts ◾ Common Emitter ◾ POUT = 1.4 W Min. ◾ GP = 7.0 dB Gain APPLICATIONS/BENEFI

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. Features • 175 MHz • 7.5 Volts • Common Emitter • POUT = 1.4 W Min. • GP = 7.0 dB Gain

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 5.0 WATT • GP = 8.5 dB MI

Inductors Military, MIL-PRF-15305 Qualified, Type LT, Molded

FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior moisture protection

RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability.

RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features ● FM CLASS C TRANSISTOR ● FREQUENCY 136MHz ● VOLTAGE 2

RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features • FM CLASS C TRANSISTOR • FREQUENCY 136MHz • VOLTAGE 2

RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. Features • 175 MHz • 28 VOLTS • POUT = 2.5 W • GP = 10 dB

CONNECTORS, ELECTRIC, RECTANGULAR, NONENVIRONMENTAL, MINIATURE, POLARIZED SHELL, RACK AND PANEL, GENERAL SPECIFCATION FOR

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Trans RF BJT NPN 16V 0.75A 4-Pin Case M-122

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：轴向 描述：FIXED IND 33UH 165MA 3 OHM TH 电感器，线圈，扼流圈 固定电感器

封装/外壳：轴向 描述：FIXED IND 33UH 165MA 3 OHM TH 电感器，线圈，扼流圈 固定电感器

1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

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Mechanical stops on request

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Temperature Sensors Line Guide

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