RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

1805-1880 MHz，72 W平均值，30 V单载波W-CDMA射频功率LDMOS

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V

封装/外壳：SOT-1110B 包装：管件 描述：FET RF 2CH 65V 1.88GHZ NI1230S8 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1110B 包装：管件 描述：FET RF 2CH 65V 1.88GHZ NI1230S8 分立半导体产品 晶体管 - FET，MOSFET - 射频