RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Volts,

IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01

Probability on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW

Output Power (2 dB Input Overdrive from Rated Pout)

• Typical Pout @ 3 dB Compression Point ≃ 280 Watts CW

Features

• Production Tested in a Symmetrical Doherty Configuration

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.