900 MHz, 30 W, 24 V RF Power Transistor

RF POWER TRANSISTOR NPN SILICON

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NPN Silicon RF Power Transistor

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Trans GP BJT NPN 30V 4A 3-Pin NI-780S

900 MHz, 30 W, 24 V RF Power Transistor

RF POWER TRANSISTOR NPN SILICON

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NPN Silicon RF Power Transistor

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NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

UHF push-pull power transistor

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. FEATURES • Internal input matching for an optimum wideband capab

Low Prroffiille MIINII Fuses

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