DESCRIPTION

NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.

FEATURES

• Internal input matching for an optimum wideband capability and high gain

• Polysilicon emitter ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.