NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications

NPN SILICON POWER DARLINGTONS

文件：107.35 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN DARL 60V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN DARL 60V 8A

UHF push-pull power transistor

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. FEATURES • Internal input matching for an optimum wideband capab

Low Prroffiille MIINII Fuses

文件：244.28 Kbytes Page：1 Pages

RF POWER TRANSISTOR NPN SILICON

文件：151.71 Kbytes Page：6 Pages

RF POWER TRANSISTOR NPN SILICON

文件：172.28 Kbytes Page：6 Pages