3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SIUCON

3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON

Trans GP BJT NPN 16V 0.2A

NPN SILICON RF POWER TRANSISTOR

3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON

3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SIUCON

3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz. FEATURES INCLUDE: • Input Matching Network • High Gain • Gold Metalization

NPN SILICON RF POWER TRANSISTOR

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) • High DC Current Gain • Low Saturation Voltage • Complement to Type BD840 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in television circu

Novel Current-Sense Measurement with Automatic Offset Correction

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