NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain

NPN SILICON RF POWER TRANSISTOR

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • -8 A, -20 V.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

NPN (FM RADIO RF AMP, MIX, CONV, OSC, IF AMP)

FM RADIO RF AMP, MIX, CONV, OSC , IF AMP High Current Gain Banwidth Product ft= 250MHz(Typ)

ABRUPT VARACTOR DIODES

ABRUPT VARACTOR DIODES