General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V

• Low gate charge (30nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• Small footprint (38 smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.

Applications

• Load switch

• Motor driving

• Power Management