RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA P

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA P

封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

Fast Recovery Rectifier (1000Amperes Average 1600 Volts)

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