位置：首页 > IC中文资料第2171页 > MRF7S21210HSR3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF7S21210HSR3 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA P | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF7S21210HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA P | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | |
MRF7S21210HSR3 | 封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF7S21210HSR3产品属性
- 类型
描述
- 型号
MRF7S21210HSR3
- 功能描述
射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
23+ |
高频管 |
655 |
专营高频管模块,全新原装! |
|||
FREESCALE |
24+ |
TO-63 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
FREESCALE |
25+23+ |
NA |
23958 |
绝对原装正品全新进口深圳现货 |
|||
FRESSCAL |
24+ |
SMD |
199 |
||||
恩XP |
22+ |
NI780S |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FREESCALE |
18+ |
N/A |
85600 |
保证进口原装可开17%增值税发票 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE |
25+ |
TO-63 |
880000 |
明嘉莱只做原装正品现货 |
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