位置：首页 > IC中文资料第2068页 > MRF7S19120N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF7S19120N | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 36 W Avg., 28 V | ETC 知名厂家 | ETC |   |
RF Power Field Effect Transistor 1930-1990 MHz, 36 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Perform | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：TO-270AB 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ TO-270-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：517.78 Kbytes Page：14 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：517.78 Kbytes Page：14 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF7S19120N产品属性
- 类型
描述
- 型号
MRF7S19120N
- 功能描述
射频MOSFET电源晶体管 1990MHZ 36W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCAL |
3200 |
原装长期供货! |
|||||
原厂 |
23+ |
SMD |
5000 |
原装正品,假一罚十 |
|||
Freescale(飞思卡尔) |
2022+ |
60000 |
原厂原装,假一罚十 |
||||
FREESCALE |
25+ |
TO-270 |
12500 |
只做进口原装假一罚百 |
|||
FREESCALE |
24+ |
SOT23-5 |
9600 |
原装现货,优势供应,支持实单! |
|||
原装FREESCALE |
19+ |
TO-270 |
20000 |
||||
Freescale(飞思卡尔) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
FREESCALE |
23+ |
TO-270 |
6000 |
专业配单保证原装正品假一罚十 |
|||
FREESCALE |
2023+ |
5800 |
进口原装,现货热卖 |
||||
FREESCALE/飞思卡尔 |
1221+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-272 |
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