MRF6V2300N价格

参考价格:¥556.4654

型号:MRF6V2300NBR1 品牌:Freescale 备注:这里有MRF6V2300N多少钱,2025年最近7天走势,今日出价,今日竞价,MRF6V2300N批发/采购报价,MRF6V2300N行情走势销售排行榜,MRF6V2300N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MRF6V2300N

N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6V2300N

10-600 MHz,300 W,50 V单端宽带射频功率LDMOS

ETC

知名厂家

N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes Page:19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

ETC

知名厂家

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:643.65 Kbytes Page:16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:TO-272BB 包装:托盘 描述:FET RF 110V 220MHZ TO-272-4 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

封装/外壳:TO-270AB 包装:托盘 描述:FET RF 110V 220MHZ TO-270-4 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:643.65 Kbytes Page:16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:643.65 Kbytes Page:16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6V2300N产品属性

  • 类型

    描述

  • 型号

    MRF6V2300N

  • 制造商

    FREESCALE

  • 制造商全称

    Freescale Semiconductor, Inc

  • 功能描述

    N-Channel Enhancement-Mode Lateral MOSFETs

更新时间:2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Freescale(飞思卡尔)
24+
NA/
8735
原厂直销,现货供应,账期支持!
恩XP
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
FREESCALE
23+
TO-59
8510
原装正品代理渠道价格优势
Fairchild
24+
7500
FREESCA
18+
TO-272
85600
保证进口原装可开17%增值税发票
恩XP
1701+
?
11520
只做原装进口,假一罚十
FREESCALE
24+
SMD
1680
FREESCALE专营品牌进口原装现货假一赔十
FSC
24+
con
10000
查现货到京北通宇商城
Freescale
15+
4095
全新进口原装
FREESCALE
23+
TO-272
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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