RF Power Field Effect Transistor

10-450 MHz, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW

Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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封装/外壳：TO-272BC 包装：托盘 描述：FET RF 110V 220MHZ TO272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-272BC 包装：托盘 描述：FET RF 110V 220MHZ TO-272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor

10-450 MHz, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW