10-450 MHz, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 35 mA, Pout = 10 Watts

Power Gain — 25 dB

Drain Efficiency — 64

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power

Features

• Integrated ESD Protection

• Excellent Thermal Stability

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 225°C Capable Plastic Package

• RoHS Compliant