位置：首页 > IC中文资料第6668页 > MRF5S21130
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 |   | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF5S21130产品属性
- 类型
描述
- 型号
MRF5S21130
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
24+ |
MODL |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MOTOROLA |
23+ |
MODL |
999999 |
原装正品现货量大可订货 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
6540 |
只做原装正品现货!或订货假一赔十! |
||||
FREESCALE |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Motorola |
25+23+ |
465B-03 |
29958 |
绝对原装正品全新进口深圳现货 |
|||
Freescale |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
MOTOROLA |
22+ |
SIP |
3000 |
原装正品,支持实单 |
|||
freescal |
2023+ |
SOT |
5800 |
进口原装,现货热卖 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCAL |
05+ |
高频管 |
15 |
原装现货海量库存欢迎咨询 |
MRF5S21130规格书下载地址
MRF5S21130参数引脚图相关
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MRF652
- MRF650
- MRF648
- MRF646
- MRF644
- MRF6414
- MRF641
- MRF6409
- MRF6408
- MRF6404
- MRF6402
- MRF6401
- MRF630
- MRF63
- MRF629
- MRF627
- MRF616
- MRF607
- MRF604
- MRF6.3
- MRF5S4140HR5
- MRF5S4140HR3
- MRF5S4125NR1
- MRF5S4125NBR1
- MRF5S21150SR3
- MRF5S21150S
- MRF5S21150R3
- MRF5S21150HSR5
- MRF5S21150HSR3
- MRF5S21150HR5
- MRF5S21150HR3
- MRF5S21150
- MRF5S21130SR3
- MRF5S21130S
- MRF5S21130R3
- MRF5S21130HSR5
- MRF5S21130HSR3
- MRF5S21130HS
- MRF5S21130HR5
- MRF5S21130HR3
- MRF5S21100LSR3
- MRF5S21100LR3
- MRF5S21100HSR5
- MRF5S21100HSR3
- MRF5S21100HR5
- MRF5S21100HR3
- MRF5S21090LSR3
- MRF5S21090LR3
- MRF5S21090L
- MRF5S21090HSR5
- MRF5S21090HSR3
- MRF5S21090HR5
- MRF5S21090HR3_08
- MRF5S21090HR3_06
- MRF5S21090HR3
- MRF5S21045NR1_09
- MRF5S21045NR1
- MRF5S21045NBR1
- MRF5S21045MR1
- MRF5S21045MBR1
- MRF5943
- MRF587
- MRF586
- MRF581G
- MRF581A
- MRF5812
- MRF581
- MRF572
- MRF571
- MRF559G
- MRF559
- MRF5583
- MRF557T
- MRF557G
- MRF557
- MRF555T
- MRF555
- MRF553T
- MRF553G
- MRF553
MRF5S21130数据表相关新闻
MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21MRF6S9125N原装现货热卖
MRF6S9125N射频金属氧化物半导体场效应(RF MOSFET)晶体管
2021-2-3MRF6V3090NBR1射频金属氧化物半导体场效应(RF MOSFET)晶体管
MRF6V3090NBR1射频金属氧化物半导体场效应(RF MOSFET)晶体管
2020-11-24MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
2020-3-26MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
