位置：首页 > IC中文资料第6668页 > MRF5S21130
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 |   | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula | Motorola 摩托罗拉 | | ||
2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET | ETC 知名厂家 | ETC | | |
2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET | ETC 知名厂家 | ETC | |
MRF5S21130产品属性
- 类型
描述
- 型号
MRF5S21130
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
24+ |
MODL |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
MOTOROLA/摩托罗拉 |
2023+ |
SIP |
8635 |
一级代理优势现货,全新正品直营店 |
|||
MOTOROLA |
24+ |
MODL |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
FREE |
24+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FREESCALE |
2025+ |
4000 |
原装进口价格优 请找坤融电子! |
||||
恩XP |
23+ |
NI880S |
8000 |
只做原装现货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
SIP |
50000 |
全新原装正品现货,支持订货 |
MRF5S21130规格书下载地址
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