位置：首页 > IC中文资料第3787页 > MRF5S21100H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF5S21100H | 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs | ETC 知名厂家 | ETC |   |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF5S21100H产品属性
- 类型
描述
- 型号
MRF5S21100H
- 功能描述
射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI780H
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
飞思卡尔 |
24+ |
119 |
现货供应 |
||||
MOTOROLA |
18+ |
SOT-502A |
22708 |
全新原装现货,可出样品,可开增值税发票 |
|||
FREESCALE |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FREESCALE |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FREESCALE |
05/06+ |
1008 |
全新原装100真实现货供应 |
||||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
飞思卡尔 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MOT |
23+ |
SOT-502A |
5000 |
原装正品,假一罚十 |
|||
FREESCALE |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
FRESC |
24+ |
29 |
MRF5S21100H规格书下载地址
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