7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The BU406 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■

NPN SILICON POWER TRANSISTORS

● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature

NPN POWER TRANSISTOR

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

High Voltage Switching

High Voltage Switching • Use In Horizontal Deflection Output Stage

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in TV horizontal output and switching applications. TO-220A

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed-: tf= 750ns(Max) ·Low Saturation Voltage-: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s

NPN Power Transistors

NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltag

NPN Epitaxial Silicon Transistor

High Voltage Switching * Use In Horizontal Deflection Output Stage

NPN SLICON POWER TRANSISTOR JEDEC TO-220 CASE

DESCRIPTION The CENTRAL SEMICONDUCTOR BU406 series types are Silicon NPN High Voltage Power Transistors designed for fast switching, horizontal deflection output stages of monitors.

NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)

NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Voltage ● Fast Switching Speed: tf = 750 ns (max) ● Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A ● Pb−Free Packages are Available*

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage. Applications High voltage switching and humidifier.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ● High breakdown voltage ● High current capability ● High switching speed ● High reliability ● RoHS product APPLICATIONS ● High frequency switching power supply ● High frequency power transform ● Commonly power amplifier circuit

NPN PLASTIC POWER TRANSISTORS

Horizontal Deflection Output Stages of TV and CRT

TRANSISTOR (NPN) High Voltage

FEATURES ● High Voltage ● Fast Switching Speed: tf = 750 ns (max) ● Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A ● Pb−Free Packages are Available*

Silicon NPN Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Fast Switching Speed- : tf= 750ns(Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection output stages of TV’s and CRT’s

TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Voltage Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Pb−Free Packages are Available*

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 200V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 200V 7A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Power Transistors

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SEMICONDUCTORS

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High frequency switching power supply

文件：935.91 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：110.71 Kbytes Page：4 Pages

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

NPN Epitaxial Silicon Transistor

文件：163.88 Kbytes Page：5 Pages

NPN SILICON POWER TRANSISTORS

文件：139.4 Kbytes Page：6 Pages

SILICON NPN SWITCHING TRANSISTOR

文件：56.26 Kbytes Page：4 Pages

Quad analog switch

General-purpose CMOS Logic IC Series (BU4S,BU4000B Series) High Voltage CMOS Logic ICs Analog Switch ●Description BU4066BC series ICs each contain 4 independent switches capable of controlling either digital or analog signals. BU4051BC / BU4052BC / BU4053BC / and BU4551B series ICs are

Quad analog switch

General-purpose CMOS Logic IC Series (BU4S,BU4000B Series) High Voltage CMOS Logic ICs Analog Switch ●Description BU4066BC series ICs each contain 4 independent switches capable of controlling either digital or analog signals. BU4051BC / BU4052BC / BU4053BC / and BU4551B series ICs are

Quad analog switch

General-purpose CMOS Logic IC Series (BU4S,BU4000B Series) High Voltage CMOS Logic ICs Analog Switch ●Description BU4066BC series ICs each contain 4 independent switches capable of controlling either digital or analog signals. BU4051BC / BU4052BC / BU4053BC / and BU4551B series ICs are

Hex inverter

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Hex inverter

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Hex inverter

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

NPN POWER TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)

HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE

POWER TRANSISTORS(7A,150-200V,60W)

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage • Fast switching speed • Low saturation voltage • Built-in damper diode APPLICATIONS • For use in horizontal deflection output stages of TV’s and CTV’s circuits

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

Silicon NPN Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Fast Switching Speed- : tf= 750μs(Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection output stages of TV’s and CRT’s

isc Silicon NPN Power Transistors

DESCRIPTION • High Voltage • Fast Switching Speed- : toff= 0.75μs (Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in converters, inverters, switching regulators and motor control systems etc.

isc Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • High Voltage • Fast Switching Speed-: toff= 0.75μs (Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in converters, inverters, switching regulators and motor control systems etc.

NPN Power Transistors

NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltag

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Fast Switching Speed- : tf= 400ns(Max.) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection output stages of TV’s and CRT’s

High Voltage Switching

High Voltage Switching • Use In Horizontal Deflection Output Stage

Silicon NPN Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Fast Switching Speed- : tf= 400ns(Max.) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection output stages of TV’s and CRT’s

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage. Applications High voltage switching and humidifier.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ● High breakdown voltage ● High current capability ● High switching speed ● High reliability ● RoHS product APPLICATIONS ● High frequency switching power supply ● High frequency power transform ● Commonly power amplifier circuit

CMOS QUAD BILATERAL SWITCH

CMOS 4-Bit Magnitude Comparator

CMOS QUAD BILATERAL SWITCH

Quad Bilateral Switch

Quad Bilateral Switch

Quad Bilateral Switch

CMOS QUAD BILATERAL SWITCH

CMOS QUAD BILATERAL SWITCH

Quad Bilateral Switch

OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS QUAD BILATERAL SWITCH FOR TRANSMISSION

Quadruple Analog Switch/Quadruple Multiplexer

Quadruple bilateral switches

Quadruple bilateral switches

INTEGRATED CIRCUIT BLOCK DIAGRAM

Quad Analog Switch/Quad Multiplexer

Quad Analog Switch/Quad Multiplexer

Quad Analog Switch/Quad Multiplexer

Quad Analog Switch/Quad Multiplexer

Quad Analog Switch/Quad Multiplexer

Quad Analog Switches

COMPLEMENTARY METAL OXIDE SILICON

C2MOS DIGITAL INTERGRATED CIRCUIT SILICON MONOLITHIC

QUAD BILATERAL SWITCH

Quad Bilateral Switch