RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI MRF377is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment. FEATURES: •PG= 16.5 dB min. at 45 W/860 MHz • η = 21 Minimum •

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 860MHZ NI-860C 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes Page：14 Pages

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 860MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

3-Axis 짹200 g Analog MEMS

GENERAL DESCRIPTION The ADXL377 is a small, thin, low power, complete 3-axis accelerometer with signal conditioned voltage outputs. The ADXL377 measures acceleration resulting from motion, shock, or vibration with a typical full-scale range of ±200 g. FEATURES 3-axis sensing Small, l

Silver Oxide Batteries

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low-loss, compact, and economical surface-acoustic-wave (SAW) filter

文件：97.26 Kbytes Page：3 Pages

low-loss, compact, and economical surface-acoustic-wave filter

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Small, Low Power, 3-Axis 200 g Accelerometer

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