NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI MRF377is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment. FEATURES: •PG= 16.5 dB min. at 45 W/860 MHz • η = 21 Minimum •

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nTheASI MRF377is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment.\nFEATURES:\n•PG= 16.5 dB min. at 45 W/860 MHz\n• η = 21 % Minimum\n• Omnigold™ Met

470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET

470-860 MHz, 45 W Avg., 32 V Lateral N-Channel RF Power MOSFET

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for largeñsignal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical B

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 860MHZ NI-860C 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes Page：14 Pages

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes Page：14 Pages

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 860MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively

SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF(2)=0.43V (Typ.) • Small Package : ESC.

Round Type

Round Type φ 3.0 mm Series

Silicon Complementary Transistors Power Amp Driver, Output, Switch

Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Featur

Round Type

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