RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 860MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频