RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.81GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

STI GF FIRE ALARM PUSH BUTTON

KEY FEATURES General Information · Fire alarm with optional IP camera helps identify person activating. · Three year guarantee against breakage of polycarbonate in normal use (one year on electromechanical and electronic components). Design · Push-to-Activate and Key-to-Reset operation. · Bu

P/N 48-6645-18 48-Pin 0.5mm QFP-to-48-Pin 0.600

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