P/N 48-6645-18 48-Pin 0.5mm QFP-to-48-Pin 0.600

文件：621.11 Kbytes Page：1 Pages

MSTB 2,5/17-ST-5,08-LR - PCB connector

PCB connector, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Socket, number of potentials: 17, number of rows: 1, number of positions: 17, number of connections: 17, product range: MSTB 2,5/..-ST-

MSTB 2,5/18-ST-5,08-LR - PCB connector

PCB connector, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Tin, contact connection type: Socket, number of potentials: 18, number of rows: 1, number of positions: 18, number of connections: 18, product range: MSTB 2,5/..-ST

MSTB 2,5/20-ST-5,08-LR - PCB connector

PCB connector, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Socket, number of potentials: 20, number of rows: 1, number of positions: 20, number of connections: 20, product range: MSTB 2,5/..-ST-

PCB header - MSTBA 2,5/ 4-G-5,08-LR

PCB headers, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Tin, type of contact: Male connector, number of potentials: 4, number of rows: 1, number of positions: 4, number of connections: 4, product range: MSTBA 2,5/..-G-LR,

包装：袋 描述：NPT1/2\ 电缆，电线 - 管理 缆线固定扣

包装：袋 描述：NPT1/2\ 电缆，电线 - 管理 缆线固定扣

Printed-circuit board connector - MSTB 2,5/14-ST-5,08-LR

文件：107.08 Kbytes Page：7 Pages

MSTB 2,5/21-G-5,08

文件：151.82 Kbytes Page：5 Pages

Printed-circuit board connector - MSTB 2,5/15-ST-5,08-LR

文件：107.14 Kbytes Page：7 Pages

MSTBV 2,5/22-G-5,08

文件：151.27 Kbytes Page：5 Pages

MSTB 2,5/22-G-5,08

文件：147.21 Kbytes Page：5 Pages

Printed-circuit board connector - MSTB 2,5/16-ST-5,08-LR

文件：107.13 Kbytes Page：7 Pages

MSTBVA 2,5/23-G-5,08

文件：152.46 Kbytes Page：5 Pages

MSTBV 2,5/24-G-5,08

文件：151.5 Kbytes Page：5 Pages

ICC 2,5/ 2-STZ-5,08

文件：158.57 Kbytes Page：6 Pages

Printed-circuit board connector - MSTB 2,5/19-ST-5,08-LR

文件：107.39 Kbytes Page：7 Pages

Printed-circuit board connector - MSTBC 2,5/ 3-STZ-5,08-R

文件：65.519 Kbytes Page：3 Pages

Printed-circuit board connector - MSTBC 2,5/ 4-STZ-5,08-R

文件：65.34 Kbytes Page：3 Pages

FASTIN-FASTON Product Line

文件：649.53 Kbytes Page：15 Pages

FASTIN-FASTON Product Line

文件：649.53 Kbytes Page：15 Pages

Printed-circuit board connector - MSTBA 2,5/ 2-G-5,08-LR

文件：66.54 Kbytes Page：5 Pages

Printed-circuit board connector - MSTBC 2,5/ 5-STZ-5,08-R

文件：65.519 Kbytes Page：3 Pages

Printed-circuit board connector - MSTBC 2,5/ 6-STZ-5,08-R

文件：65.57 Kbytes Page：3 Pages

FASTIN-FASTON Product Line

文件：649.53 Kbytes Page：15 Pages

FASTIN-FASTON Product Line

文件：649.53 Kbytes Page：15 Pages

Printed-circuit board connector - MSTBA 2,5/ 3-G-5,08-LR

文件：66.61 Kbytes Page：5 Pages

MSTBC 2,5/ 7-STZ-5,08-R

文件：145.09 Kbytes Page：5 Pages

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.