型号 功能描述 生产厂家 企业 LOGO 操作
MRF18060AL

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs

ETC

知名厂家

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

Motorola

摩托罗拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:374.03 Kbytes Page:10 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:SOT-957A 包装:卷带(TR) 描述:FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:374.03 Kbytes Page:10 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:SOT-957A 包装:卷带(TR) 描述:FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

TriQuint

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

TriQuint

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

TriQuint

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

CK-COMPONENTS

力特

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

CK-COMPONENTS

力特

MRF18060AL产品属性

  • 类型

    描述

  • 型号

    MRF18060AL

  • 功能描述

    射频MOSFET电源晶体管 60W GSM 1.8GHZ

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-12-31 15:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
25+
MODL
860000
明嘉莱只做原装正品现货
Freescale
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
Freescale
25+
NI-780S
2789
全新原装自家现货!价格优势!
MOTOROLA/摩托罗拉
24+
8540
只做原装正品现货或订货假一赔十!
MOTOROLA/摩托罗拉
25+
1200
全新原装现货,价格优势
MOTOROLA/摩托罗拉
24+
9600
原装现货,优势供应,支持实单!
FREESCALE
23+
TO-59
8510
原装正品代理渠道价格优势
MOTOROLA
19+
MODL
20000
30
MOT
22+
变频度金
3000
原装现货库存.价格优势
MOTOROLA/摩托罗拉
25+
6820
价格优势 支持实单

MRF18060AL数据表相关新闻