RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

The RF MOSFET Line 200/150W, 500MHz, 28V

文件：447.7 Kbytes Page：16 Pages

The RF MOSFET Line 200/150W, 500MHz, 28V

The RF MOSFET Line

文件：447.7 Kbytes Page：16 Pages

The RF MOSFET Line 200/150W, 500MHz, 28V

文件：1.04918 Mbytes Page：17 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

文件：209 Kbytes Page：10 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

文件：209 Kbytes Page：10 Pages

封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 65V 225MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 100W, 400MHz, 28V

封装/外壳：333-04 包装：托盘 描述：FET RF 65V 400MHZ 333-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL BROADBAND RF POWER FETs

文件：144.95 Kbytes Page：8 Pages

The RF MOSFET Line 100W, 400MHz, 28V

文件：238.07 Kbytes Page：7 Pages

The RF MOSFET Line 100W, 400MHz, 28V

文件：238.07 Kbytes Page：7 Pages

The RF MOSFET Line

文件：238.07 Kbytes Page：7 Pages

The RF MOSFET Line 100W, 400MHz, 28V

文件：703.94 Kbytes Page：8 Pages

N-CHANNEL BROADBAND RF POWER FETs

文件：144.95 Kbytes Page：8 Pages

100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER FETs

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：418.49 Kbytes Page：1 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

3M??Temflex??Vinyl Electrical Tape 175

文件：127.76 Kbytes Page：2 Pages

Auto Line Transformer

文件：345.58 Kbytes Page：2 Pages