The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • G

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

The RF MOSFET Line 80W, 175MHz, 28V

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N-CHANNEL BROADBAND RF POWER MOSFET

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RF Power Field Effect Transistors

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封装/外壳：316-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 150MHZ 316-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 80W, 175MHz, 28V

Trans RF MOSFET N-CH 65V 9A 4-Pin Case 316-01

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line

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The RF MOSFET Line

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4-BIT D-TYPE REGISTERS WITH 3-STATE OUTPUTS

3-State Outputs Interface Directly With System Bus Gated Output-Control LInes for Enabling or Disabling the Outputs Fully Independent Clock Virtually Eliminates Restrictions for Operating in One of Two Modes: – Parallel Load – Do Nothing (Hold) For Application as Bus Buffer Registers Pac

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Combination of Thin, Flexible

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Temperature Sensors Line Guide

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