N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • G

N-CHANNEL BROADBAND RF POWER MOSFET

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The RF MOSFET Line 80W, 175MHz, 28V

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RF Power Field Effect Transistors

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封装/外壳：316-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 150MHZ 316-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

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The RF MOSFET Line

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GABINETE S ALMENDRA 175 X 124 X 64 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

Solid-Electrolyte TANTALEX Capacitors, Axial-Leaded, Molded-Case

FEATURES • Axial through-hole terminations: tin / lead    (SnPb), 100 tin (RoHS-compliant) • Miniature axial-lead capacitors available in    5 sizes • Precision molded in gold colored, flame    retardant, thermosetting epoxy resin • Laser marked for improved legibility and    tapered end

Combination of Thin, Flexible

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Temperature Sensors Line Guide

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