Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 V:

Output power = 80 W Gain = 11 dB (13 dB typ.) Efficiency = 55 Min. (60 typ.)

• Low thermal resistance

• Ruggedness tested at rated output power

• Nitride passivated die for enhance

• ed reliability

• Low noise figure — 1.5 dB typ. at 2.0 A, 150 MHz

• Excellent thermal stability; suited for Class A operation