N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • Guaranteed

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

The RF MOSFET Line 80W, 175MHz, 28V

文件：343.29 Kbytes Page：12 Pages

The RF MOSFET Line 80W, 175MHz, 28V

文件：343.29 Kbytes Page：12 Pages

RF Power Field Effect Transistors

文件：103.87 Kbytes Page：2 Pages

封装/外壳：211-11，2 型 包装：托盘 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

N-CHANNEL BROADBAND RF POWER MOSFETs

Trans RF MOSFET N-CH 65V 9A 4-Pin Case 211-11

The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • G

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

The RF MOSFET Line

文件：343.29 Kbytes Page：12 Pages

RF Power Field Effect Transistors

文件：103.87 Kbytes Page：2 Pages

封装/外壳：316-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 150MHZ 316-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL BROADBAND RF POWER MOSFET

文件：119.19 Kbytes Page：6 Pages

The RF MOSFET Line 80W, 175MHz, 28V

文件：229.39 Kbytes Page：9 Pages

The RF MOSFET Line

文件：229.39 Kbytes Page：9 Pages

The RF MOSFET Line

文件：681.19 Kbytes Page：10 Pages

4-BIT D-TYPE REGISTERS WITH 3-STATE OUTPUTS

3-State Outputs Interface Directly With System Bus Gated Output-Control LInes for Enabling or Disabling the Outputs Fully Independent Clock Virtually Eliminates Restrictions for Operating in One of Two Modes: – Parallel Load – Do Nothing (Hold) For Application as Bus Buffer Registers Pac

Temperature Sensors Line Guide

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RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：418.49 Kbytes Page：1 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Combination of Thin, Flexible

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