N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • Guaranteed

The RF MOSFET Line 80W, 175MHz, 28V

文件：343.29 Kbytes Page：12 Pages

The RF MOSFET Line 80W, 175MHz, 28V

文件：343.29 Kbytes Page：12 Pages

RF Power Field Effect Transistors

文件：103.87 Kbytes Page：2 Pages

封装/外壳：211-11，2 型 包装：托盘 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

N-CHANNEL BROADBAND RF POWER MOSFETs

Trans RF MOSFET N-CH 65V 9A 4-Pin Case 211-11

The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET • G

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

The RF MOSFET Line

文件：343.29 Kbytes Page：12 Pages

N-CHANNEL BROADBAND RF POWER MOSFET

文件：119.19 Kbytes Page：6 Pages

RF Power Field Effect Transistors

文件：103.87 Kbytes Page：2 Pages

封装/外壳：316-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 150MHZ 316-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 80W, 175MHz, 28V

文件：229.39 Kbytes Page：9 Pages

The RF MOSFET Line

文件：229.39 Kbytes Page：9 Pages

The RF MOSFET Line

文件：681.19 Kbytes Page：10 Pages

Programmable logic array 22 횞 42 횞 10

DESCRIPTION The PLS173 is a two-level logic element consisting of 42 AND gates and 10 OR gates with fusible link connections for programming I/O polarity and direction. All AND gates are linked to 12 inputs (I) and 10 bidirectional I/O lines (B). These yield variable I/O gate configurations

Programmable logic arrays 22 횞 42 횞 10

DESCRIPTION The PLUS173 PLDs are high speed, combinatorial Programmable Logic Arrays. The Philips Semiconductors state-of-the-art Oxide Isolated Bipolar fabrication process is employed to produce propagation delays as short as 12ns. FEATURES • I/O propagation delays (worst case) – PLUS173B

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The PPG173TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 25 mA low current operation. It is housed in a very small 6 pin mini-mold package available on