N-Channel Enhancement Mode TMOS RF FET

DESCRIPTION: The ASI MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz. FEATURES: • PG = 12 dB min at 150 MHz • Omnigold™ Metalization System • 2 – 200 MHz operation

TMOS RF FET N-Channel Enhancement Mode

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The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, idea

MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, ideally suited for C

RF Power Field-Effect Transistor

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The RF MOSFET Line 45W, 150MHz, 28V

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封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 200MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

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The RF MOSFET Line

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Combination of Thin, Flexible

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Radial Box Metallized Polypropylene Capacitors

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High Voltage Differential FET Amplifier

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Isolating Line Transformer

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