The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, idea

MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, ideally suited for C

RF Power Field-Effect Transistor

文件：95.42 Kbytes Page：2 Pages

The RF MOSFET Line 45W, 150MHz, 28V

文件：472.26 Kbytes Page：14 Pages

封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 200MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

文件：472.26 Kbytes Page：14 Pages

The RF MOSFET Line

文件：1.06387 Mbytes Page：15 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Combination of Thin, Flexible

文件：659.91 Kbytes Page：2 Pages

Radial Box Metallized Polypropylene Capacitors

文件：190.05 Kbytes Page：3 Pages

High Voltage Differential FET Amplifier

文件：805.1 Kbytes Page：4 Pages

Isolating Line Transformer

文件：61.39 Kbytes Page：1 Pages