Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.

N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc

Output power = 45 W

Power gain = 17 dB (min)

Efficiency = 60 (min)

• Excellent thermal stability, ideally suited for Class A operation

• Facilitates manual gain control, ALC and modulation techniques

• 100 tested for load mismatch at all phase angles with 30:1 VSWR

• Low Crss – 8 pF @ VDS = 28 V

• Gold top metal

Typical data for power amplifier applications in industrial, commercial and amateur radio equipment

• Typical performance at 30 MHz, 28 Vdc

Output power = 30 W (PEP)

Power gain = 20 dB (typ.)

Efficiency = 50 (typ.)

IMD(d3) (30 W PEP) –32 dB (typ.)